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2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
NEW PRODUCT
* * * * * *
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant (Note 2)
G TOP VIEW S E D G H K J L B C D
SOT-23 Dim
A
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8
A B C D E G
M
Mechanical Data
* * * * * * * * * *
Case: SOT-23 Case Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K7B Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.)
H J K L M a
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous VGSS ID Pd RqJA Tj, TSTG Value 60 60 20 40 240 300 417 -55 to +150 Units V V V mA mW C/W C
Characteristic
Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
DS30376 Rev. 5 - 2
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2N7002E
a Diodes Incorporated
Electrical Characteristics
@ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) @ Tj = 25C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 1.0 3/4 3/4 0.8 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 1.6 2.0 1.0 3/4 22 11 2.0 7.0 11 Max 3/4 1.0 500 10 2.5 3 4 3/4 3/4 50 25 5.0 20 20 Unit V A nA V W A mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = 15V, VDS = 0V VDS = VGS, ID = 250mA VGS = 10V, ID = 250mA VGS = 4.5V, ID = 200mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time
Ordering Information
Device 2N7002E-7-F
Notes:
(Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7B
Date Code Key Year Code Month Code Jan 1 Feb 2 2003 P March 3
K7B = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September
2004 R Apr 4 May 5
YM
2005 S Jun 6 Jul 7
2006 T Aug 8
2007 U Sep 9
2008 V Oct O Nov N
2009 W Dec D
DS30376 Rev. 5 - 2
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2N7002E
1.0
NE W PRODUCT
0.8 ID, DRAIN-SOURCE CURRENT (A)
5.5V
ID, DRAIN CURRENT (A)
0.6
VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V
2.0
10V
1.6
TA = -55C
1.2
TA = 25C
5.0V
0.4
0.8
TA = 125C
0.2
0.4
2.1V 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics
0 0 1 2 3 4 5 6 7
VGS, GATE TO SOURCE VOLTAGE (V) Fig. 2 Drain Current vs. Gate-Source Voltage
RDS(ON), DRAIN-SOURCE-ON-RESISTANCE (W)
RDS(ON), - DRAIN-SOURCE-ON-RESISTANCE (W)
5
5
4
4
3
ID = 250mA
3
VGS = 4.5V
2
ID = 75mA
2
VGS = 10V
1
1
0 0 2 4 6 8 10 VGS - GATE TO SOURCE VOLTAGE (V) Fig. 3 On Resistance vs. Gate to Source Voltage
0 0 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 4 On Resistance vs. Drain Current
5
350
4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)
PD, POWER DISSIPATION (mW)
300 250 200 150 100 50
3
VGS= 4.5V @ 200mA
2
1
VGS= 10V @ 250mA
0 -75 -50 -25 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 6, Max Power Dissipation vs Ambient Temperature
TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs. Junction Temperature
DS30376 Rev. 5 - 2
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2N7002E
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated.
DS30376 Rev. 5 - 2
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2N7002E

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